SUM110N04-02L(2001) 查看數據表（PDF） - Vishay Semiconductors
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SUM110N04-02L Datasheet PDF : 5 Pages
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New Product
SUM110N04-02L
Vishay Siliconix
N-Channel 40-V (D-S) 200_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
40
rDS(on) (W)
0.0023 @ VGS = 10 V
0.0038 @ VGS = 4.5 V
ID (A)
110 a
FEATURES
D TrenchFETr Power MOSFET
D 200_C Junction Temperature
D New Package with Low Thermal Resistance
APPLICATIONS
D Automotive
– ABS
– 12-V EPS
– Motor Drives
D
TO-263
G
G DS
Top View
SUM110N04-02L
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
40
"20
Continuous Drain Current (TJ = 175_C)
Pulsed Drain Current
TC = 25_C
TC = 125_C
Avalanche Current
Repetitive Avalanche Energyb
L = 0.1 mH
Maximum Power Dissipationb
TC = 25_C
TA = 25_C
Operating Junction and Storage Temperature Range
ID
IDM
IAR
EAR
PD
TJ, Tstg
110a
110a
440
75
280
437.5c
3.75
–55 to 200
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mountd
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 70763
S-04970—Rev. B, 29-Oct-01
Symbol
RthJA
RthJC
Limit
40
0.4
Unit
_C/W
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