SUM110N04-02L(2001) 查看數據表（PDF） - Vishay Semiconductors

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SUM110N04-02L
(Rev.:2001)

N-Channel 40-V (D-S) 200°C MOSFET

Vishay Semiconductors 

SUM110N04-02L

Vishay Siliconix

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

On-Resistance vs. Junction Temperature

2.0

100

VGS = 10 V

ID = 30 A

1.6

Source-Drain Diode Forward Voltage

1.2

TJ = 150_C

TJ = 25_C

10

0.8

0.4

0.0

–50 –25 0 25 50 75 100 125 150 175 200

TJ – Junction Temperature (_C)

1

0

0.3

0.6

0.9

1.2

VSD – Source-to-Drain Voltage (V)

1000

Avalanche Current vs. Time

100

IAV (A) @ TA = 25_C

10

IAV (A) @ TA = 150_C

1

0.1

0.00001 0.0001 0.001 0.01

0.1

1

tin (Sec)

Drain Source Breakdown vs.

Junction Temperature

60

55

ID = 10 mA

50

45

40

–50 –25 0 25 50 75 100 125 150 175 200

TJ – Junction Temperature (_C)

www.vishay.com

4

Document Number: 70763

S-04970—Rev. B, 29-Oct-01

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