DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

TGA2520 查看數據表(PDF) - TriQuint Semiconductor

零件编号
产品描述 (功能)
生产厂家
TGA2520
TriQuint
TriQuint Semiconductor TriQuint
TGA2520 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
TGA2520
Assembly Process Notes
Reflow process assembly notes:
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300°C.
(30 seconds maximum)
An alloy station or conveyor furnace with reducing atmosphere should be used.
No fluxes should be utilized.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire.
Maximum stage temperature is 200°C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TriQuint Semiconductor Texas www.triquint.com Phone : (972)994-8465 Fax: (972)994-8504 info-mmw@tqs.com
9
June
2006

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]