TYN1006 查看數據表（PDF） - STMicroelectronics

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TYN1006

6A SCRS

STMicroelectronics 

TYN606 / TYN1006

Figure 3: Average on-state current versus case

temperature

IT(AV)(A)

7

D.C.

6

5

4

α = 180°

3

2

1

Tcase(°C)

0

0 10 20 30 40 50 60 70 80 90 100 110 120 130

Figure 4: Relative variation of thermal

impedance versus pulse duration

K=[Zth(j-c)/Rth(j-c)]

1

Zth(j-c)

0.1

Zth(j-a)

0.01

1E-3

1E-2

tp(s)

1E-1

1E+0

1E+1

1E+2

5E+2

Figure 5: Relative variation of gate trigger

current versus junction temperature

IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]

2.5

2

1.5

1

IGT

IH & IL

0.5

Tj(°C)

0

-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110

Figure 6: Surge peak on-state current versus

number of cycles

ITSM(A)

80

70

60

50

40

30

20

10

0

1

Tj initial=25°C

tp=10ms

One cycle

Number of cycles

10

100

1000

Figure 7: Non-repetitive surge peak on-state

current for a sinusoidal pulse with width

tp < 10 ms, and corresponding values of I²t

ITSM(A), I2t (A2s)

100

Tj initial = 25°C

ITSM

10

1

I2t

tp(ms)

2

5

10

Figure 8: On-state characteristics (maximum

values)

ITM(A)

100

Tj=max

10

Tj=25°C

1

1

2

VTM(V)

3

Tj max.:

Vt0=1.0V

Rd=46mΩ

4

5

3/6

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