025N06N 查看數據表（PDF） - Unspecified

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025N06N

OptiMOS Power-Transistor

Unspecified 

Parameter

Symbol Conditions

IPD025N06N

min.

Values

typ.

Unit

max.

Dynamic characteristics

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

C iss

-

C oss

V GS=0 V, V DS=30 V,

f =1 MHz

-

Crss

-

t d(on)

-

tr

V DD=30 V, V GS=10 V,

-

I D=90 A,

t d(off)

R G,ext,ext=1.6 W

-

tf

-

Gate Charge Characteristics5)

Gate to source charge

Gate charge at threshold

Gate to drain charge

Switching charge

Gate charge total

Gate plateau voltage

Gate charge total, sync. FET

Output charge

Q gs

-

Q g(th)

-

Q gd

V DD=30 V, I D=90 A,

-

Q sw

V GS=0 to 10 V

-

Qg

-

V plateau

-

Q g(sync)

V DS=0.1 V,

V GS=0 to 10 V

-

Q oss

V DD=30 V, V GS=0 V

-

Reverse Diode

Diode continuous forward current I S

-

T C=25 °C

Diode pulse current

I S,pulse

-

Diode forward voltage

V SD

V GS=0 V, I F=90 A,

T j=25 °C

-

Reverse recovery time

Reverse recovery charge

t rr

V R=30 V, I F=I S,

-

Q rr

di F/dt =100 A/µs

-

5) See figure 16 for gate charge parameter definition

5200

1200

48

16

20

34

12

6500 pF

1500

96

- ns

-

-

-

24

- nC

14

-

13

17

23

-

71

83

4.7

-V

62

- nC

81

-

-

90 A

-

360

1.0

1.2 V

83

133 ns

105

nC

Rev.2.3

page 3

2012-12-20

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