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SPD08P06PG(2008) 查看數據表(PDF) - Infineon Technologies
零件编号
产品描述 (功能)
生产厂家
SPD08P06PG
(Rev.:2008)
SIPMOS® Power-Transistor
Infineon Technologies
SPD08P06PG Datasheet PDF : 9 Pages
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8
9
13 Avalanche characteristics
I
AS
=f(
t
AV
);
R
GS
=25
Ω
parameter:
T
j(start)
10
1
14 Typ. gate charge
V
GS
=f(
Q
gate
);
I
D
=-8.8 A pulsed
parameter:
V
DD
16
SPD08P06P
G
14
25 °C
12
100 °C
125 °C
10
12 V
30 V
48 V
8
6
4
2
10
0
10
0
10
1
10
2
t
AV
[µs]
15 Drain-source breakdown voltage
V
BR(DSS)
=f(
T
j
);
I
D
=-250 µA
0
10
3
0
3
6
9
12
15
Q
gate
[nC]
70
65
60
55
Rev 1.
9
50
-60
-20
20
60 100 140 180
T
j
[°C]
page 7
200
8
-
10
-
13
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