FMMTL717(1997) 查看數據表（PDF） - Diodes Incorporated.

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FMMTL717
(Rev.:1997)

SOT23 PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR

Diodes Incorporated. 

FMMTL717

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).

PARAMETER

SYMBOL MIN. TYP. MAX.

Collector-Base

Breakdown Voltage

V(BR)CBO

-12

-35

Collector-Emitter

Breakdown Voltage

V(BR)CEO

-12 -25

Emitter-Base

V(BR)EBO

-5

-8.5

Breakdown Voltage

Collector Cut-Off Current ICBO

Emitter Cut-Off Current IEBO

Collector Cut-Off Current ICES

Collector-Emitter

Saturation Voltage

VCE(sat)

-10

-10

-10

-24

-40

-94

-140

-160 -240

-200 -290

Base-Emitter

Saturation Voltage

VBE(sat)

-970 -1100

Base-Emitter

Turn On Voltage

VBE(on)

-875 -1000

Static Forward

hFE

Current Transfer Ratio

300 490

300 450

180 275

100 180

50

110

Transition Frequency

fT

205

UNIT

V

V

V

nA

nA

nA

mV

mV

mV

mV

mV

mV

MHz

Collector-Base

Breakdown Voltage

Cobo

15

20

pF

Switching times

ton

toff

76

ns

149

ns

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

CONDITIONS.

IC=-100µA

IC=-10mA*

IE=-100µA

VCB=-10V

VEB=-4V

VCE=-10V

IC=-100mA, IB=-10mA*

IC=-500mA, IB=-20mA*

IC=-1A, IB=-50mA*

IC=-1.25A,IB=-50mA

IC=-1.25A, IB=-50mA*

IC=-1.25A, VCE=-2V*

IC=-10mA, VCE=-2V

IC=-100mA, VCE=-2V*

IC=-1A, VCE=-2V*

IC=-2A, VCE=-2V*

IC=-3A, VCE=-2V*

IC=-50mA, VCE=-10V

f=100MHz

VCB=-10V, f=1MHz

IC=-1A, VCC=-10V

IB1=IB2=-10mA

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