G30N60C3D 查看數據表（PDF） - Fairchild Semiconductor

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G30N60C3D

63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

Fairchild Semiconductor 

HGTG30N60C3D

Typical Performance Curves (continued)

200

100oC

10

150oC

25oC

1

0

0.5

1.0

1.5

2.0

2.5

3.0

VEC, FORWARD VOLTAGE (V)

Figure 19. DIODE FORWARD CURRENT vs FORWARD

VOLTAGE DROP

60

TC = 25oC, dIEC/dt = 100A/µs

50

trr

40

30 ta

20 tb

10

0

1

5

10

30

IEC, FORWARD CURRENT (A)

Figure 20. RECOVERY TIME vs FORWARD CURRENT

Test Circuit and Waveforms

RG = 3Ω

L = 100µH

RHRP3060

+

-

VDD = 480V

Figure 21. INDUCTIVE SWITCHING TEST CIRCUIT

90%

VGE

10%

EOFF EON

VCE

90%

ICE

10%

td(OFF) I

tfI

trI

td(ON) I

Figure 22. SWITCHING TEST WAVEFORMS

©2009 Fairchild Semiconductor Corporation

HGTG30N60C3D Rev. B

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