HGTG40N60B3 查看數據表（PDF） - Harris Semiconductor
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HGTG40N60B3 Datasheet PDF : 6 Pages
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HGTG40N60B3
Typical Performance Curves (Continued)
TJ = +150oC, TC = +75oC, VGE = +15V, RG = 3Ω, L = 100µH
200
100
50
20
10 fMAX1 = 0.05/(tD(OFF)I + tD(ON)I)
fMAX2 = (PD - PC)/(EON + EOFF)
5 PD = ALLOWABLE DISSIPATION
PC = CONDUCTION DISSIPATION
2
(DUTY FACTOR = 50%)
RθJC = 0.43oC/W
1
10
20
30
50
70
100
ICE, COLLECTOR-EMITTER CURRENT (A)
FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
200
TC = +150oC, VGE = 15V, RG = 3Ω, L = 45µH
160
120
80
40
0
0
100
200
300
400
500 600
VCE, COLLECTOR-EMITTER VOLTAGE (V)
FIGURE 14. SWITCHING SAFE OPERATING AREA
100
0.5
0.2
10-1 0.1
PD
0.05
0.02
NOTES:
t1
t2
0.01
SINGLE PULSE
DUTY FACTOR, D = t1/t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-2
10-5
10-4
10-3
10-2
10-1
100
101
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 15. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
Test Circuit and Waveforms
RG = 3Ω
L = 100µH
RHRP3060
VGE
VCE
+
-
VDD = 480V
ICE
90%
EOFF
10%
EON
90%
10%
tD(OFF)I tFI
tRI
tD(ON)I
FIGURE 16. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 17. SWITCHING TEST WAVEFORMS
9-7
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