MMBD1203 查看數據表（PDF） - Fairchild Semiconductor
零件编号
产品描述 (功能)
生产厂家
MMBD1203 Datasheet PDF : 4 Pages
| |||
Electrical Characteristics
Symbol
BV
IR
Parameter
Breakdown Voltage
Reverse Current
VF
Forward Voltage
CT
Diode Capacitance
TRR
Reverse Recovery Time
High Conductance Ultra Fast Diode
(continued)
TA = 25°C unless otherwise noted
Test Conditions
IR = 100 µA
VR = 20 V
VR = 50 V
VR = 50 V, TA = 150°C
IF = 1.0 mA
IF = 10 mA
IF = 100 mA
IF = 200 mA
IF = 300 mA
VR = 0, f = 1.0 MHz
IRR = 1.0 mA, IF = IR = 10 mA,
RL = 100Ω
Min
100
550
660
820
0.87
Max
25
50
5.0
600
740
920
1.0
1.1
2.0
4.0
Units
V
nA
nA
µA
mV
mV
mV
V
V
pF
nS
Typical Characteristics
REVERSE VOLTAGE vs REVERSE CURRENT
BV - 1.0 to 100 uA
150
Ta= 25°C
140
130
120
110
1
23 5
10 20 30 50 100
IR - REVERSE CURRENT (uA)
REVERSE CURRENT vs REVERSE VOLTAGE
IR - 10 to 100 V
300 Ta= 25°C
250
200
150
100
50
0
10
20
30
50 70
VR - REVERSE VOLTAGE (V)
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
100
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 1.0 to 100 uA
485
450 Ta= 25°C
400
350
300
250
225
1
23 5
10 20 30 50 100
IF - FORWARD CURRENT (uA)
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 0.1 to 10 mA
725
700 Ta= 25°C
650
600
550
500
450
0.1 0.2 0.3 0.5
1
23 5
10
IF - FORWARD CURRENT (mA)
Share Link: 