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VT5200-E3/4W(2009) 查看數據表(PDF) - Vishay Semiconductors

零件编号
产品描述 (功能)
生产厂家
VT5200-E3/4W
(Rev.:2009)
Vishay
Vishay Semiconductors Vishay
VT5200-E3/4W Datasheet PDF : 5 Pages
1 2 3 4 5
New Product
VT5200, VFT5200, VBT5200, VIT5200
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.58 V at IF = 2.5 A
TO-220AC
TMBS ®
ITO-220AC
VT5200
2
1
PIN 1
PIN 2
CASE
TO-263AB
K
VFT5200
PIN 1
PIN 2
TO-262AA
K
2
1
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 275 °C max. 10 s, per JESD 22-B106 (for
TO-220AC, ITO-220AC and TO-262AA package)
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
A
NC
VBT5200
NC
K
A
HEATSINK
VIT5200
NC
A
K
NC
K
A
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
5.0 A
VRRM
200 V
IFSM
80 A
VF at IF = 5.0 A
0.65 V
TJ max.
150 °C
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
VRRM
IF(AV)
IFSM
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH
Peak repetitive reverse current
at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C
Voltage rate of change (rated VR)
Isolation voltage (ITO-220AC only)
from terminal to heatsink t = 1 min
EAS
IRRM
dV/dt
VAC
Operating junction and storage temperature range
TJ, TSTG
VT5200
VFT5200 VBT5200
200
5.0
80
30
0.5
10 000
1500
- 40 to + 150
VIT5200
UNIT
V
A
A
mJ
A
V/μs
V
°C
Document Number: 89176 For technical questions within your region, please contact one of the following:
Revision: 09-Dec-09
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1

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