STP10N60M2 查看數據表（PDF） - STMicroelectronics

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STP10N60M2

N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh II Plus™ low Qg Power MOSFETs in D²PAK, DPAK, TO-220 and IPAK packages

STMicroelectronics 

STB10N60M2, STD10N60M2,

STP10N60M2, STU10N60M2

N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh II Plus™ low Qg

Power MOSFETs in D²PAK, DPAK, TO-220 and IPAK packages

Datasheet − production data

TAB

3

1

D2 PAK

TAB

3

2

1

TO-220

TAB

3

1

DPAK

TAB

3

2

1

IPAK

Figure 1. Internal schematic diagram

, TAB

Features

Order codes VDS @ TJmax

RDS(on)

max

ID

STB10N60M2

STD10N60M2

STP10N60M2

STU10N60M2

650 V

0.600 Ω 7.5 A

• Extremely low gate charge

• Lower RDS(on) x area vs previous generation

• Low gate input resistance

• 100% avalanche tested

• Zener-protected

Applications

• Switching applications

Description

AM15572v1

These devices are N-channel Power MOSFETs

developed using a new generation of MDmesh™

technology: MDmesh II Plus™ low Qg. These

revolutionary Power MOSFETs associate a

vertical structure to the company's strip layout to

yield one of the world's lowest on-resistance and

gate charge. They are therefore suitable for the

most demanding high efficiency converters.

Order codes

STB10N60M2

STD10N60M2

STP10N60M2

STU10N60M2

Table 1. Device summary

Marking

Package

2

D PAK

10N60M2

DPAK

TO-220

IPAK

Packaging

Tape and reel

Tube

December 2013

This is information on a product in full production.

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