STP10N60M2 查看數據表（PDF） - STMicroelectronics

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STP10N60M2

N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh II Plus™ low Qg Power MOSFETs in D²PAK, DPAK, TO-220 and IPAK packages

STMicroelectronics 

Electrical characteristics

STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2

Figure 14. Normalized VDS vs temperature

VDS

(norm)

1.11

ID=1mA

AM15831v1

1.09

1.07

1.05

1.03

1.01

0.99

0.97

0.95

0.93

-50 -25 0 25 50 75 100 125 TJ(°C)

Figure 15. Output capacitance stored energy

Eoss(µJ)

AM15832v1

3

2

1

0

0 100 200 300 400 500 600 VDS(V)

8/24

DocID024710 Rev 2

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