STP10N60M2 查看數據表（PDF） - STMicroelectronics
零件编号
产品描述 (功能)
生产厂家
STP10N60M2 Datasheet PDF : 24 Pages
| |||
STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage
VGS
(V)
12 VDS
VDD=480V
ID=7.5A
AM15825v1
VDS
(V)
500
10
400
8
300
6
200
4
2
100
Figure 9. Static drain-source on-resistance
RDS(on)
(Ω)
0.58
VGS=10V
AM15826v1
0.57
0.56
0.55
0.54
0
0
0 2 4 6 8 10 12 Qg(nC)
0.53
1 2 3 4 5 6 7 ID(A)
Figure 10. Capacitance variations
C
(pF)
1000
AM15827v1
Ciss
Figure 11. Normalized gate threshold voltage
vs. temperature
VGS(th)
(norm)
ID=250 µA
AM15828v1
1.1
100
1.0
10
Coss
0.9
1
Crss
0.1
0.1
1
10
100 VDS(V)
Figure 12. Normalized on-resistance vs
temperature
RDS(on)
(norm)
2.5
2.3
2.1
1.9
ID=3 A
AM15829v1
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-50 -25 0 25 50 75 100 125 TJ(°C)
0.8
0.7
-50 -25 0 25 50 75 100 125 TJ(°C)
Figure 13. Source-drain diode forward
characteristics
VSD (V)
AM15830v1
1.4
1.2
TJ=-50°C
1
0.8
0.6
TJ=25°C
TJ=150°C
0.4
0.2
0
0 1 2 3 4 5 6 7 ISD(A)
DocID024710 Rev 2
7/24
Share Link: 