FP3710PBF 查看數據表（PDF） - International Rectifier

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FP3710PBF

HEXFET® Power MOSFET

International Rectifier 

IRFP3710PbF

1000

100

TOP

BOTTOM

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

1000

100

VGS

TOP

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

10

4.5V

10

4.5V

20µs PULSE WIDTH

1

TC = 25°C

A

0.1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

20µs PULSE WIDTH

1

TC = 175°C

A

0.1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

1000

TJ = 25°C

100

TJ= 175°C

10

VDS = 50V

20µs PULSE WIDTH

1

A

4

5

6

7

8

9

10

VGS , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

3.0

ID = 46A

2.5

2.0

1.5

1.0

0.5

0.0

VGS = 10V

A

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

Fig 4. Normalized On-Resistance

Vs. Temperature

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