STU10P6F6 查看數據表（PDF） - STMicroelectronics

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STU10P6F6

P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

STMicroelectronics 

STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

DPAK

TO-220FP TO-220

IPAK

VDS Drain-source voltage

VGS Gate-source voltage

ID(1) Drain current (continuous) at TC = 25 °C

ID

IDM (2)

Drain current (continuous) at TC = 100 °C

Drain current (pulsed)

PTOT Total dissipation at TC = 25 °C

EAS

Single pulse avalanche energy

(starting TJ=25 °C, ID=-3 A, VDD=40 V)

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t=1 s; TC=25 °C)

VDG Drain-gate voltage (VGS = 0)

Tstg Storage temperature

Tj

Max. operating junction temperature

1. Limited by package

2. Pulse width limited by safe operating area

-60

± 20

-10

-7.2

-40

35

20

30

80

2500

-20

-55 to 175

175

Unit

V

V

A

A

A

W

mJ

V

V

°C

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

DPAK IPAK TO-220FP TO-220

Rthj-case Thermal resistance junction-case max

Rthj-amb Thermal resistance junction-ambient max

Rthj-pcb Thermal resistance junction-pcb max(1)

1. When mounted on 1 inch2 FR-4, 2 Oz copper board

4.29

100

50

7.5

62.5

5 °C/W

62.5 °C/W

°C/W

DocID022967 Rev 5

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