STD11N65M2(2019) 查看數據表（PDF） - STMicroelectronics

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STD11N65M2
(Rev.:2019)

N-channel 650 V, 0.60 Ω typ., 7 A MDmesh™ M2 Power MOSFET in DPAK, TO-220 and IPAK packages

STMicroelectronics 

STD11N65M2, STP11N65M2, STU11N65M2

Datasheet

N-channel 650 V, 0.60 Ω typ., 7 A MDmesh™ M2

Power MOSFET in DPAK, TO-220 and IPAK packages

TAB

3

DPAK 1

TAB

TAB

TO-220

1 23

IPAK

123

D(2, TAB)

G(1)

S(3)

NG1D2TS3Z

Features

Order code

VDS

RDS(on) max.

ID

STD11N65M2

STP11N65M2

650 V

0.68 Ω

7A

STU11N65M2

• Extremely low gate charge

• Excellent output capacitance (COSS) profile

• 100% avalanche tested

• Zener-protected

PTOT

85 W

Package

DPAK

TO-220

IPAK

Applications

• Switching applications

Description

These devices are N-channel Power MOSFETs developed using the MDmesh M2

technology. Thanks to their strip layout and improved vertical structure, these devices

exhibit low on-resistance and optimized switching characteristics, rendering them

suitable for the most demanding high-efficiency converters.

Product status link

STD11N65M2

STP11N65M2

STU11N65M2

DS10348 - Rev 6 - June 2019

For further information contact your local STMicroelectronics sales office.

www.st.com

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