STD11N65M2(2019) 查看數據表（PDF） - STMicroelectronics

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STD11N65M2
(Rev.:2019)

N-channel 650 V, 0.60 Ω typ., 7 A MDmesh™ M2 Power MOSFET in DPAK, TO-220 and IPAK packages

STMicroelectronics 

Figure 13. Output capacitance stored energy

E OSS

(μJ)

GIPG110515MQF1LEOS

3

2

1

0

0 100 200 300 400 500 600 V DS (V)

STD11N65M2, STP11N65M2, STU11N65M2

Electrical characteristics (curves)

Figure 14. Source- drain diode forward characteristics

V SD

(V)

GIPG140815MQF1PSDF

T j = -50 °C

1.0

T j = 25 °C

0.8

T j = 150 °C

0.6

0.4

0

2

4

6

I SD (A)

DS10348 - Rev 6

page 7/27

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