BSZ042N06NSATMA1 查看數據表（PDF） - Infineon Technologies
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BSZ042N06NSATMA1 Datasheet PDF : 12 Pages
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OptiMOSTMPower-Transistor,60V
BSZ042N06NS
Diagram13:Avalanchecharacteristics
102
101
125 °C
100 °C
25 °C
Diagram14:Typ.gatecharge
12
10
8
12 V
30 V
48 V
6
100
4
2
10-1
100
101
102
tAV[µs]
0
103
0
10
20
30
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
VGS=f(Qgate);ID=20Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
70
Gate charge waveforms
66
62
58
54
50
-60
-20
20
60
100
140
180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
10
Rev.2.3,2014-11-10
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