BSZ042N06NSATMA1 查看數據表（PDF） - Infineon Technologies

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BSZ042N06NSATMA1

OptiMOS™ Power-Transistor, 60V

Infineon Technologies 

OptiMOSTMPower-Transistor,60V

BSZ042N06NS

4Electricalcharacteristics

Table4Staticcharacteristics

Parameter

Symbol

Drain-source breakdown voltage

Gate threshold voltage

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Gate resistance1)

Transconductance

V(BR)DSS

VGS(th)

IDSS

IGSS

RDS(on)

RG

gfs

Table5Dynamiccharacteristics1)

Parameter

Symbol

Input capacitance

Ciss

Output capacitance

Coss

Reverse transfer capacitance

Crss

Turn-on delay time

td(on)

Rise time

tr

Turn-off delay time

td(off)

Fall time

tf

Min.

60

2.1

-

-

-

-

-

-

27

Values

Typ. Max.

-

-

2.8 3.3

0.5 1

10 100

10 100

3.4 4.2

4.9 6.3

1.6 2.4

54 -

Unit Note/TestCondition

V VGS=0V,ID=1mA

V

VDS=VGS,ID=36µA

µA

VDS=60V,VGS=0V,Tj=25°C

VDS=60V,VGS=0V,Tj=125°C

nA VGS=20V,VDS=0V

mΩ

VGS=10V,ID=20A

VGS=6V,ID=5A

Ω-

S

|VDS|>2|ID|RDS(on)max,ID=20A

Min.

-

-

-

-

-

-

-

Values

Unit Note/TestCondition

Typ. Max.

2000 2500 pF VGS=0V,VDS=30V,f=1MHz

490 612.5 pF VGS=0V,VDS=30V,f=1MHz

22

44

pF VGS=0V,VDS=30V,f=1MHz

10 -

ns

VDD=30V,VGS=10V,ID=20A,

RG,ext,ext=1.7Ω

7

-

ns

VDD=30V,VGS=10V,ID=20A,

RG,ext,ext=1.7Ω

19 -

ns

VDD=30V,VGS=10V,ID=20A,

RG,ext,ext=1.7Ω

6

-

ns

VDD=30V,VGS=10V,ID=20A,

RG,ext,ext=1.7Ω

1) Defined by design. Not subject to production test.

Final Data Sheet

5

Rev.2.3,2014-11-10

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