BSZ042N06NSATMA1 查看數據表（PDF） - Infineon Technologies
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BSZ042N06NSATMA1 Datasheet PDF : 12 Pages
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OptiMOSTMPower-Transistor,60V
BSZ042N06NS
Table6Gatechargecharacteristics1)
Parameter
Symbol
Gate to source charge
Gate charge at threshold
Gate to drain charge2)
Switching charge
Gate charge total2)
Gate plateau voltage
Gate charge total, sync. FET
Output charge2)
Qgs
Qg(th)
Qgd
Qsw
Qg
Vplateau
Qg(sync)
Qoss
Min.
-
-
-
-
-
-
-
-
Values
Typ. Max.
9
-
5
-
5
7
8
-
27 32
4.4 -
24 -
32 40
Unit Note/TestCondition
nC VDD=30V,ID=20A,VGS=0to10V
nC VDD=30V,ID=20A,VGS=0to10V
nC VDD=30V,ID=20A,VGS=0to10V
nC VDD=30V,ID=20A,VGS=0to10V
nC VDD=30V,ID=20A,VGS=0to10V
V VDD=30V,ID=20A,VGS=0to10V
nC VDS=0.1V,VGS=0to10V
nC VDD=30V,VGS=0V
Table7Reversediode
Parameter
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time2)
Reverse recovery charge2)
Symbol
IS
IS,pulse
VSD
trr
Qrr
Min.
-
-
-
-
-
Values
Typ. Max.
-
40
-
160
0.9 1.2
33 53
33 -
Unit Note/TestCondition
A TC=25°C
A TC=25°C
V VGS=0V,IF=20A,Tj=25°C
ns VR=30V,IF=20A,diF/dt=100A/µs
nC VR=30V,IF=20A,diF/dt=100A/µs
1) See ″Gate charge waveforms″ for parameter definition
2) Defined by design. Not subject to production test.
Final Data Sheet
6
Rev.2.3,2014-11-10
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