OptiMOSTMPower-Transistor,60V
BSZ042N06NS
Diagram5:Typ.outputcharacteristics
160
10 V 7 V 6 V
140
120
100
80
60
40
20
0
0.0
0.5
1.0
VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS
5.5 V
5V
1.5
Diagram6:Typ.drain-sourceonresistance
12
5V
5.5 V
10
8
6
6V
7V
4
10 V
2
0
2.0
0
40
80
120
160
ID[A]
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
160
Diagram8:Typ.forwardtransconductance
120
140
100
120
80
100
80
60
60
40
20
150 °C
25 °C
0
0
2
4
VGS[V]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
40
20
0
6
0
20
gfs=f(ID);Tj=25°C
40
60
ID[A]
80
100
Final Data Sheet
8
Rev.2.3,2014-11-10