180N10N 查看數據表（PDF） - Infineon Technologies

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180N10N

OptiMOS™3 Power-Transistor

Infineon Technologies 

IPA180N10N3 G

OptiMOSTM3 Power-Transistor

Features

• N-channel, normal level

• Excellent gate charge x R DS(on) product (FOM)

• Very low on-resistance R DS(on)

Product Summary

V DS

R DS(on),max

ID

• 175 °C operating temperature

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC1) for target application

• Ideal for high-frequency switching and synchronous rectification

Type

IPA180N10N3 G

100 V

18 mΩ

28 A

Package

Marking

PG-TO220-FP

180N10N

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Continuous drain current

ID

T C=25 °C2)

T C=100 °C

Pulsed drain current2)

I D,pulse T C=25 °C

Avalanche energy, single pulse

E AS

I D=28 A, R GS=25 Ω

Gate source voltage

V GS

Power dissipation

P tot

T C=25 °C

Operating and storage temperature T j, T stg

IEC climatic category; DIN IEC 68-1

1)J-STD20 and JESD22

2) See figure 3

Value

Unit

28

A

20

112

59

mJ

±20

V

30

W

-55 ... 175

°C

55/175/56

Rev. 2.2

page 1

2009-07-09

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