180N10N 查看數據表（PDF） - Infineon Technologies
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180N10N Datasheet PDF : 9 Pages
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IPA180N10N3 G
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
-
C oss
V GS=0 V, V DS=50 V,
f =1 MHz
-
C rss
-
t d(on)
-
tr
V DD=50 V, V GS=10 V,
-
t d(off)
I D=28 A, R G=1.6 Ω
-
tf
-
1350
237
11
11
5
18
3
1800 pF
315
-
- ns
-
-
-
Gate Charge Characteristics4)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Q gs
-
7
- nC
Q gd
-
4
-
Q sw
V DD=50 V, I D=28 A,
V GS=0 to 10 V
-
6
-
Qg
-
19
25
V plateau
-
4.8
-V
Q oss
V DD=50 V, V GS=0 V
-
25
33 nC
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
IS
I S,pulse
T C=25 °C
V SD
V GS=0 V, I F=28 A,
T j=25 °C
t rr
V R=50 V, I F=28A ,
Q rr
di F/dt =100 A/µs
-
-
28 A
-
-
112
-
0.9
1.2 V
-
57
ns
-
94
- nC
4) See figure 16 for gate charge parameter definition
Rev. 2.2
page 3
2009-07-09
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