180N10N 查看數據表（PDF） - Infineon Technologies
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180N10N Datasheet PDF : 9 Pages
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13 Avalanche characteristics
I AS=f(t AV); R GS=25 Ω
parameter: T j(start)
100
25 °C
10
100 °C
150 °C
IPA180N10N3 G
14 Typ. gate charge
V GS=f(Q gate); I D=28 A pulsed
parameter: V DD
10
8
80 V
50 V
6
20 V
4
2
1
1
10
100
t AV [µs]
15 Drain-source breakdown voltage
V BR(DSS)=f(T j); I D=1 mA
110
105
1000
0
0
4
8
12
16
20
Q gate [nC]
16 Gate charge waveforms
V GS
Qg
100
V g s(th)
95
Q g(th)
90
-60 -20
20
60 100 140 180
T j [°C]
Q gs
Rev. 2.2
page 7
Q sw
Q gd
Q gate
2009-07-09
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