NDD05N50Z 查看數據表（PDF） - ON Semiconductor
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NDD05N50Z Datasheet PDF : 9 Pages
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NDF05N50Z, NDP05N50Z, NDD05N50Z
TYPICAL CHARACTERISTICS
1200
1100
1000
900
TJ = 25°C
VGS = 0 V
f = 1 MHz
800
700
600
Ciss
500
400
300
200
100 Crss
0
05
Coss
10 15 20 25 30 35 40 45
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
15.0
14.0
13.0
12.0
11.0
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
50
0
QGS
2
VDS
46
300
QT
250
QGD
200
VGS
150
100
VDS = 250 V
ID = 5 A
50
TJ = 25°C
0
8 10 12 14 16 18 20
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source Voltage and
Drain−to−Source Voltage versus Total Charge
1000
VDD = 250 V
ID = 5 A
VGS = 10 V
100
10
td(off)
tr
tf
td(on)
1.0
1
10
100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
100
10
TJ = 150°C
1.0
125°C
25°C
−55°C
0.1
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage versus
Current
100
VGS v 30 V
SINGLE PULSE
10 TC = 25°C
1
100 ms 10 ms
1 ms
10 ms
dc
0.1
0.01
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
100
1000
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area NDD05N50Z
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