40N60 查看數據表（PDF） - IXYS CORPORATION
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40N60 Datasheet PDF : 6 Pages
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IXSH 40N60 IXSM 40N60
IXSH 40N60A IXSM 40N60A
Symbol
gfs
IC(on)
Cies
C
oes
Cres
Qg
Qge
Qgc
td(on)
t
ri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
t
fi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
16 23
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
VGE = 15 V, VCE = 10 V
V = 25 V, V = 0 V, f = 1 MHz
CE
GE
200
A
4500
pF
350
pF
90
pF
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
190 260 nC
45 60 nC
88 120 nC
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 100 µH
VCE = 0.8 VCES, RG = 2.7 Ω
55
ns
170
ns
400
ns
Switching times may
40N60
400
ns
increase for VCE (Clamp)
40N60A
200
ns
> 0.8 • VCES, higher TJ or
increased RG
40N60
40N60A
5.0
2.5
mJ
mJ
Inductive load, TJ =
125°C
I = I , V = 15 V,
C C90 GE
L = 100 µH
V = 0.8 V ,
CE
CES
RG = 2.7 Ω
Remarks: Switching times
may increase for
VCE (Clamp) > 0.8 • VCES,
higher T or increased R
J
G
40N60
40N60A
40N60
40N60A
40N60
40N60A
55
ns
170
ns
1.7
mJ
1000 ns
340 525 ns
600 1500 ns
340 700 ns
12
mJ
6
mJ
0.42 K/W
0.25
K/W
TO-247 AD Outline
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
TO-204AE Outline
1 = Gate
2 = Emitter
Case = Collector
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: 408-982-0700, Fax: 408-496-0670
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents: 4,835,592 4,881,108 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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