2SK3339-01 查看數據表（PDF） - Fuji Electric
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2SK3339-01 Datasheet PDF : 4 Pages
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2SK3339-01
FUJI POWER MOSFET
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=13.5A,VGS=10V
0.8
0.7
0.6
0.5
0.4
0.3
max.
typ.
0.2
0.1
0.0
-50 -25
0
25
50
75 100 125 150
Tch [°C]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=27A,Tch=25°C
25
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
5.0
4.5
4.0
3.5
max.
3.0
typ.
2.5
2.0
min.
1.5
1.0
0.5
0.0
-50 -25
0
25
50
75 100 125 150
Tch [°C]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
10-7
20
10-8
Vcc= 100V
15
250V
400V
10-9
10
10-10
5
Ciss
Coss
Crss
0
0
50
100
150
200
250
300
350
Qg [C]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs pulse test,Tch=25°C
100
10-11
10-2
10-1
100
101
102
VDS [V]
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=10 Ω
104
10
103
td(off)
tf
1
102
tr
td(on)
0.1
101
0.00
0.25
0.50
0.75
1.00
1.25
1.50
10-1
100
101
102
VSD [V]
ID [A]
3
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