UPA2732UT1A 查看數據表（PDF） - NEC => Renesas Technology
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UPA2732UT1A Datasheet PDF : 6 Pages
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μ PA2732UT1A
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
-1000
-100
-10
-1
-0.1
ID(pul se)
PW
ID(DC)
1ms =100μs
RD(Sa(otn)VLGimS=ite−d10V)
T A =25°C
Single P ulse
Power
100m10sms
dissipation1L0imsited
M o unted o n a galass epo xy bo ard
(25.4mm × 25.4mm × 0.8mm)
-0.01
-0.1
-1
-10
-100
VDS - Drain to Source Voltage - V
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Single pulse
100
Rth(ch-A)= 83.3°C/W
10
Rth(ch-C)= 1.5°C/W
1
-200
0.1
Rth(ch-A) : Mounted on a glass epoxy board (25.4mm x 25.4mm x 0.8 mm)
0.01
100 μ
1m
10 m
100 m
1
PW - Pulse Width - s
10
100
1000
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
-1000
-150
-100
VGS= −10V
−4.5V
-100
Tch=150°C
-10
75°C
25°C
−55°C
-1
-50
Pulsed
0
0
-0.2 -0.4 -0.6 -0.8 -1
VDS - Drain to Source Voltage - V
-0.1
-0.01
0
Pulsed
VDS=−10V
-1
-2
-3
-4
VGS - Gate to Source Voltage - V
Data Sheet G17641EJ1V1DS
3
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