UPA2732UT1A 查看數據表（PDF） - NEC => Renesas Technology
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UPA2732UT1A Datasheet PDF : 6 Pages
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μ PA2732UT1A
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
-2.5
-2
-1.5
-1
-0.5
0
-50
Pulsed
VDS= −10V
ID= −1mA
0
50
100
150
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
10
8
6
4
2
0
-0.1
−4.5V
VGS= −10V
Pulsed
-1
-10
-100
ID - Drain Current - A
-1000
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
10
Pulsed
ID= −20A
8
6
−4.5V
4
VGS= −10V
2
0
-50
0
50
100
150
Tch - Channel Temperature - °C
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
-100
Tch=150°C
75°C
25°C
−55°C
-10
-1
-0.01
Pulsed
VDS= −10V
-0.1
-1
-10
-100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
15
Pulsed
ID= −20A
10
5
0
0
-5
-10
-15
-20
VGS - Gate to Source Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
Coss
C rs s
100
VGS=0V
f =1MHz
10
-0.1
-1
-10
-100
VDS - Drain to Source Voltage - V
4
Data Sheet G17641EJ1V1DS
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