FCH072N60F-ND 查看數據表（PDF） - Fairchild Semiconductor
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FCH072N60F-ND Datasheet PDF : 9 Pages
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March 2013
FCH072N60F
N-Channel SuperFET® II FRFET® MOSFET
600 V, 52 A, 72 mΩ
Features
• RDS(on) = 65 mΩ (Typ)
• Ultra Low Gate Charge (Typ. Qg = 165 nC)
• Low Effective Output Capacitance
• 100% Avalanche Tested
• RoHS Compliant
Description
SuperFET®II MOSFET is Fairchild Semiconductor®’s first gen-
eration of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-resis-
tance and lower gate charge performance.This advanced tech-
nology is tailored to minimize conduction loss, provide superior
switching performance, and withstand extreme dv/dt rate and
higher avalanche energy. Consequently, SuperFETII MOSFET is
suitable for various AC/DC power conversion for system minia-
turization and higher efficiency.
D
GD S
TO-247
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-DC
-AC
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
(Note 1)
(Note 2)
(Note 3)
©2013 Fairchild Semiconductor Corporation
1
FCH072N60F Rev. C3
S
Ratings
600
±20
30
52
33
156
1128
9.5
4.8
100
50
481
3.85
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
V/ns
W
W/oC
oC
oC
Ratings
0.26
40
Unit
oC/W
www.fairchildsemi.com
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