FCH072N60F-ND 查看數據表（PDF） - Fairchild Semiconductor
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FCH072N60F-ND Datasheet PDF : 9 Pages
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Package Marking and Ordering Information
Device Marking
FCH072N60F
Device
FCH072N60F
Package
TO-247
Reel Size
-
Tape Width
-
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
ID = 10mA, VGS = 0V, TC = 25oC
ID = 10mA, VGS = 0V, TC = 150oC
ID = 10mA, Referenced to 25oC
VDS = 480V, VGS = 0V
VDS = 480V, VGS = 0V, TC = 125oC
VGS = ±20V, VDS = 0V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250μA
VGS = 10V, ID = 26A
VDS = 20V, ID = 26A
Dynamic Characteristics
Ciss
Coss
Crss
Coss
Cosseff.
Qg(tot)
Qgs
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance(G-S)
VDS = 100V, VGS = 0V
f = 1MHz
VDS = 380V, VGS = 0V, f = 1MHz
VDS = 0V to 480V, VGS = 0V
VDS = 380V, ID = 26A,
VGS = 10V
(Note 4)
Drain Open
Min.
600
650
-
-
-
-
3
-
-
-
-
-
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
VDD = 380V, ID = 26A
-
RG = 4.7Ω
-
(Note 4)
-
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 26A
-
trr
Reverse Recovery Time
VGS = 0V, ISD = 26A
-
Qrr
Reverse Recovery Charge
dIF/dt = 100A/μs
-
Typ.
-
-
0.67
-
-
-
-
65
42
6510
205
1.5
110
441
165
36
66
0.78
43
38
140
25
-
-
-
165
1.15
Quantity
30
Max. Unit
-
-
-
1
10
±100
V
V
V/oC
μA
nA
5
V
72
mΩ
-
S
8660 pF
275
pF
2.5
pF
-
pF
-
pF
215 nC
-
nC
-
nC
-
Ω
96
ns
86
ns
290
ns
60
ns
52
A
156
A
1.2
V
-
ns
-
μC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 9.5A, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 26A, di/dt ≤ 200A/μs, VDD ≤ 380V, Starting TJ = 25°C
4. Essentially Independent of Operating Temperature Typical Characteristics
©2013 Fairchild Semiconductor Corporation
FCH072N60F Rev. C3
2
www.fairchildsemi.com
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