FDB33N25 查看數據表（PDF） - Fairchild Semiconductor
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FDB33N25 Datasheet PDF : 8 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
102 Top :
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
101
100
10-1
※ Notes :
℃ 1. 250µ s Pulse Test
2. T = 25
C
100
101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.25
0.20
0.15
0.10
0.05
0.00
0
VGS = 10V
VGS = 20V
※ ℃ Note : TJ = 25
20
40
60
80
100
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
4000
3000
2000
1000
0
10-1
Coss
C
iss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Note ;
Crss
1. VGS = 0 V
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
102
101
100
2
150oC
25oC
-55oC
※ Notes :
1. VDS = 40V
2. 250µ s Pulse Test
4
6
8
10
12
VGS, Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
102
101
100
0.2
℃ 150
℃25
※ Notes :
1. VGS = 0V
2. 250µ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V , Source-Drain voltage [V]
SD
Figure 6. Gate Charge Characteristics
12
VDS = 50V
10
VDS = 125V
VDS = 200V
8
6
4
2
※ Note : ID = 33A
0
0
10
20
30
40
QG, Total Gate Charge [nC]
FDB33N25 Rev A
3
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