BT151X-500R 查看數據表（PDF） - NXP Semiconductors.
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BT151X-500R Datasheet PDF : 11 Pages
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NXP Semiconductors
Symbol
Parameter
Conditions
ID
off-state current
VD = 500 V; Tj = 125 °C
IR
reverse current
VR = 500 V; Tj = 125 °C
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
VDM = 335 V; Tj = 125 °C; RGK = 100 Ω;
(VDM = 67% of VDRM); exponential
waveform; Fig. 12
VDM = 335 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit; Fig. 12
tgt
gate-controlled turn-on ITM = 40 A; VD = 500 V; IG = 100 mA;
time
dIG/dt = 5 A/µs; Tj = 25 °C
tq
commutated turn-off VDM = 335 V; Tj = 125 °C; ITM = 20 A;
time
VR = 25 V; (dIT/dt)M = 30 A/µs; dVD/
dt = 50 V/µs; RGK = 100 Ω; (VDM = 67%
of VDRM)
3
IGT
IGT(25°C)
2
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3
IL
IL(25°C)
2
BT151X-500R
SCR
Min Typ Max Unit
-
0.1 0.5 mA
-
0.1 0.5 mA
200 1000 -
V/µs
50
130 -
V/µs
-
2
-
µs
-
70
-
µs
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1
1
0
- 50
0
50
100
150
Tj (°C)
0
- 50
0
50
100
150
Tj (°C)
Fig. 7. Normalized gate trigger current as a function of Fig. 8. Normalized latching current as a function of
junction temperature
junction temperature
BT151X-500R
Product data sheet
All information provided in this document is subject to legal disclaimers.
15 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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