MJF18004 查看數據表（PDF） - Inchange Semiconductor
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MJF18004 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
MJF18004
DESCRIPTION
·With TO-220F package
·High voltage ,high speed
APPLICATIONS
·Designed for use in 220V line-operated
switchmode power supplies and electronic
light ballasts
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
·
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
固IN电C半H导AN体GE SEMICONDUCTOR VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current (DC)
ICM
Collector current-Peak
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1000
450
9
5
10
UNIT
V
V
V
A
A
IB
Base current
2
A
IBM
Base current-Peak
4
A
PD
Total power dissipation
TC=25℃
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
Rth j-A
Thermal resistance junction to ambient
MAX
3.12
62.5
UNIT
℃/W
℃/W
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