MJF18004 查看數據表（PDF） - New Jersey Semiconductor
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MJF18004 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
MJF18004
ELECTRICAL CHARACTERISTICS
Tj=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage lc=0.1A;L=25mH
450
VcE(sat)-1
VcE(sat)-2
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
lc=1 A;IB=0.1A
TC=125'C
IC=2A;IB=0.4A
TC=125"C
VcE(sat)-3 Collector-Emitter Saturation Voltage IC=2.5A;IB=0.5A
VBE(sat)-1 Base-Emitter Saturation Voltage
lc= 1A; IB= 0.1A
VsE(sat)-2 Base-Emitter Saturation Voltage
lc= 2A; IB= 0.4A
VeE(sat)-3 Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
ICEO
Collector Cutoff Current
lc=2.5A; IB=0.5A
VCES= RatedVCES;VEB= 0
TC=125'C
VOES= 800V
TC=125-C
VCE= RatedVcEo; IB= 0
V
0.5
0.6
V
0.45
0.8
V
0.75 V
1.1
V
1.25
V
1.3
V
0.05
0.5
mA
0.01
0.1
0.1
mA
IEBO
Emitter Cutoff Current
VEB= 9V; lc= 0
0.1
mA
hpE-1 DC Current Gain
lc= 1A ; VCE= 2.5V
12
hpE-2
DC Current Gain
lc=1A;VCE=5V
14
36
hpE-3
DC Current Gain
lc=2A;VCE=1V
6
hpE-4
DC Current Gain
lc=10mA;VcE=5V
10
fr
Current-Gain—Bandwidth Product lc= 0.5A;VCE= 10V;ftest=1.0MHz
13
MHz
COB Output Capacitance
|E= 0; VCB= 10V; ftest=1.0MHz
45
PF
Switching Times Resistive Load,Duty Cycled 10%,Pulse Width=20 u s
ton
Turn-on Time
ts
Storage Time
tf
Turn-off Time
VCC=250V ,IC=2.5A
lBi=lB2=0.5A
0.45 0.6
us
2
3
us
0.275 0.4
us
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