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2SC5198B-O 查看數據表(PDF) - Nell Semiconductor Co., Ltd

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2SC5198B-O Datasheet PDF : 3 Pages
1 2 3
SEMICONDUCTOR
2SC5198B Series RRooHHSS
Nell High Power Products
Silicon NPN triple diffusion planar transistor
10A/140V/100W
15.6±0.4
9.6
4.8±0.2
2.0±0.1
TO-3P(B)
FEATURES
High breakdown voltage, VCEO =140V (min)
Complementary to 2SA1941B
TO-3P package which can be installed to the
heat sink with one screw
APPLICATIONS
Suitable for use in 70W high fidelity audio
amplifier’s output stage
Φ3.2±0,1
2
3
+0.2
1.05 -0.1
5.45±0.1
5.45±0.1
BCE
0.65
+0.2
-0.1
1.4
12 3
B
All dimensions in millimeters
C
E NPN
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
SYMBOL
PARAMETER
VCBO
Collector to base voltage
VCEO
Collector to emitter voltage
VEBO
Emitter to base voltage
ICP
Peak collector current tp ≤ 5 ms
IC
Collector current
IB
Base current
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
THERMAL CHARACTERISTICS (TC = 25°C)
SYMBOL
PARAMETER
Rth(j-c)
Thermal resistance, junction to case
VALUE
140
140
5
20
10
1
TC= 25°C
100
150
-55 to 150
UNIT
V
A
W
ºC
VALUE
1.55
UNIT
ºC/W
www.nellsemi.com
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