2SC5198B-O 查看數據表（PDF） - Nell Semiconductor Co., Ltd
零件编号
产品描述 (功能)
生产厂家
2SC5198B-O Datasheet PDF : 3 Pages
| |||
SEMICONDUCTOR
2SC5198B Series RRooHHSS
Nell High Power Products
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
PARAMETER
CONDITIONS
ICBO
IEBO
V(BR)CEO
VCBO
VEBO
hFE1
hFE2
Collector cutoff current
VCBO = 140V, lE = 0
Emitter cutoff current
VEBO = 5V, lC = 0
Collector to emitter breakdown voltage lCEO = 50mA, IB = 0
Collector to base voltage
lCBO = 5 µA
Emitter to base voltage
lEBO = 5.0 µA
Forward current transfer ratio
(DC current gain)
VCE = 5V, IC = 1A
Rank-R
Rank-O
VCE = 5V, IC = 5A
MIN.
140
140
5
55
80
35
VALUE
TYP.
83
MAX.
5.0
5.0
110
160
UNIT
µA
V
VCE(sat)
VBE
fT
Cob
Collector to emitter saturation voltage lC = 7A, IB = 0.7A
Base to emitter voltage
VCE = 5V, IC = 5A
Transition frequency
(Gain-Bandwidth product)
VCE = 5V, IC = 1A
Collector output capacitance
VCB = 10V, IE = 0, f = 1MHz
0.3
2.0
V
0.9
1.5
30
MHz
170
pF
ORDERING INFORMATION SCHEME
2SC 5198 B - R
Transistor series
NPN Type
Current & Voltage rating, IC & VCEO
10A / 140V
Package type
B = TO-3PB
DC current gain rank, hFE1
R = 55 ~ 110
O = 80 ~ 160
www.nellsemi.com
Page 2 of 3
Share Link: 