2SC3356 查看數據表（PDF） - Inchange Semiconductor
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2SC3356 Datasheet PDF : 5 Pages
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
TYPCIAL CHARACTERISTICS (Ta=25℃)
DC Current Gain vs.
Collector Current
200
150
100
50
0
0.1
1
10
100
Collectot current IC(mA)
isc RF Product Specification
2SC3356
Total Power Dissipation
vs. Ambient Temperature
250
200
150
100
50
0
25
50
75 100 125 150
Ambient TemeperatureTA( ℃ )
Gain Bandwidth Product
Vs.Colllector Current
10
1
1
10
100
Collect or Current Ic(mA)
Insertion Power Gain Vs.
Collector Current
15
10
5
0
1
10
100
Collector Current Ic(mA)
Noise Figure vs.Collector
5C
4
3
2
1
0
1
10
100
Collector Current Ic(mA)
isc Website：www.iscsemi.cn
Insertion Power Gain and Maximum
Unilateral Power Gain vs. Frequency
30
25
20
15
10
5
0.1
1
10
Frequency(GHz)
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