SISA12ADN 查看數據表（PDF） - Vishay Semiconductors
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SISA12ADN Datasheet PDF : 13 Pages
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New Product
SiSA12ADN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.010
TJ = 150 °C
10
0.008
0.006
TJ = 25 °C
0.004
1
0.002
ID = 10 A
TJ = 125 °C
TJ = 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
2.0
0.000
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
100
1.8
80
1.6
60
1.4
ID = 250 μA
40
1.2
20
1.0
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
1000
Limited by RDS(on)*
100
0
0.001 0.01 0.1
1
10
100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
100 μs
10
1 ms
10 ms
1
100 ms
0.1
TA = 25 °C
BVDSS Limited
1s
10 s
DC
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
www.vishay.com
For technical questions, contact: pmostechsupport@vishay.com
Document Number: 63234
4
S13-0113-Rev. A, 21-Jan-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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