STTH3003CW 查看數據表（PDF） - STMicroelectronics
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STTH3003CW Datasheet PDF : 5 Pages
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STTH3003CW
THERMAL RESISTANCES
Symbol
Rth (j-c) Junction to case
Rth (c)
Parameter
Per diode
Total
Coupling
Value
2.0
1.05
0.1
Unit
°C/W
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
IR *
Parameter
Reverse leakage
current
VF ** Forward voltage drop
Pulse test : * tp = 5 ms, δ < 2 %
** tp = 380 µs, δ < 2%
Tests conditions
VR = 300 V
Tj = 25°C
Tj = 125°C
IF = 15 A
Tj = 25°C
Tj = 125°C
Min. Typ. Max. Unit
40
µA
40 400
1.25 V
0.85 1
To evaluate the maximum conduction losses use the following equation :
P = 0.75 x IF(AV) + 0.017 IF2(RMS)
RECOVERY CHARACTERISTICS
Symbol
Tests conditions
trr
IF = 0.5 A Irr = 0.25 A
IR = 1A Tj = 25°C
IF = 1 A dIF/dt = - 50 A/µs VR = 30V
tfr
IF = 15 A dIF/dt = 100 A/µs
VFP VFR = 1.1 x VF max.
Tj = 25°C
Sfactor
IRM
Vcc = 200 V IF = 15 A
dIF/dt = 200A/µs
Tj = 125°C
Min. Typ. Max. Unit
30
ns
40
300 ns
3.5
V
0.3
-
8.5
A
2/5
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