IRF830S 查看數據表（PDF） - KEXIN Industrial

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IRF830S

N-Channel MOSFET

KEXIN Industrial 

SMD Type

N-Channel MOSFET

IRF830S (KRF830S)

MOSFET

■ Features

● VDS (V) = 500V

● ID = 4.5 A (VGS = 10V)

● RDS(ON) ＜ 1.5Ω (VGS = 10V)

● Fast Switching

● Repetitive Avalanche Rated

D

G

S

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Avalanche Current

Tc=25℃

Tc=100℃

Power Dissipation

Tc=25℃

Ta=25℃

Single Pulse Avalanche Energy (Note1)

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

(Note 2)

Thermal Resistance.Junction- to-Ambient

Thermal Resistance.Junction- to-Ambient (PCB Mount)

Thermal Resistance.Junction- to-Case

Junction Temperature

Storage Temperature Range

Symbol

VDS

VGS

ID

IDM

IAR

PD

EAS

EAR

dv/dt

RthJA

RthJC

TJ

Tstg

Note.1: L = 24mH, IAS = 4.5A, VDD = 50V, RG = 25 Ω , Starting TJ = 25°C.

Note.2: ISD = 4.5A, di/dt = 75 A/μs, VDD = V(BR)DSS, Starting TJ = 25°C.

Rating

500

±20

4.5

2.9

18

4.5

74

3.1

280

7.4

3.5

62

40

1.7

150

-55 to 150

Unit

V

A

W

mJ

V/ns

℃/W

℃

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