IRF830S 查看數據表（PDF） - KEXIN Industrial
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IRF830S Datasheet PDF : 6 Pages
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SMD Type
N-Channel MOSFET
IRF830S (KRF830S)
MOSFET
■ Typical Characterisitics
10 1 Top
V GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
10 0 Bottom 4.5 V
4.5 V
20 µs Pulse Width
10 -1
T C = 25 °C
10 0
10 1
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, T C = 25 °C
10 1 Top
V GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
10 0 Bottom 4.5 V
4.5 V
10 -1
91064_02
20 µs Pulse Width
T C = 150 °C
10 0
10 1
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, T C = 150 °C
1500
1250
1000
750
V GS = 0 V, f = 1 MHz
C iss = Cgs + Cgd, Cds Shorted
C rss = Cgd
C oss = Cds + Cgd
C iss
500
C oss
250
0
10 0
C rss
10 1
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
10 1
150 °C
25 °C
10 0
10 -1
4
20 µs Pulse Width
V DS = 50 V
5
6
7
8
9
10
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3.0
ID = 3.1 A
V GS = 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-R esistance vs. Temperature
10 1
150 °C
10 0
25 °C
V GS = 0 V
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
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