MMBF4391LT1G(2004) 查看數據表（PDF） - ON Semiconductor

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MMBF4391LT1G
(Rev.:2004)

JFET Switching Transistors

ON Semiconductor 

MMBF4391LT1, MMBF4392LT1, MMBF4393LT1

100

90

Tchannel = 25°C

10

9.0

80

8.0

70

rDS(on) @ VGS = 0

7.0

60

6.0

50

VGS(off)

5.0

40

4.0

30

3.0

20

2.0

10

1.0

0

0

10 20 30 40 50 60 70 80 90 100 110 120 130 140 150

IDSS, ZERO−GATE VOLTAGE DRAIN CURRENT (mA)

Figure 10. Effect of IDSS on Drain−Source

Resistance and Gate−Source Voltage

NOTE 2

The Zero−Gate−Voltage Drain Current (IDSS) is the

principle determinant of other J−FET characteristics.

Figure 10 shows the relationship of Gate−Source Off

Voltage (VGS(off)) and Drain−Source On Resistance

(rDS(on)) to IDSS. Most of the devices will be within

±10% of the values shown in Figure 10. This data will

be useful in predicting the characteristic variations for

a given part number.

For example:

Unknown

rDS(on) and VGS range for an MMBF4392

The electrical characteristics table indicates that an

MMBF4392 has an IDSS range of 25 to 75 mA. Figure

10 shows rDS(on) = 52 Ohms for IDSS = 25 mA and 30

Ohms for IDSS = 75 mA. The corresponding VGS values

are 2.2 V and 4.8 V.

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