MGP14N60E 查看數據表（PDF） - Motorola => Freescale
零件编号
产品描述 (功能)
生产厂家
MGP14N60E Datasheet PDF : 6 Pages
| |||
30
TJ = 25°C
20
10
17.5 V
20 V
15 V
12.5 V
VGE = 10 V
30
TJ = 125°C
17.5 V
20
20 V
10
MGP14N60E
15 V
12.5 V
VGE = 10 V
0
0
2.0
4.0
6.0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics, TJ = 25°C
0
0
2.0
4.0
6.0
8.0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 2. Output Characteristics, TJ = 125°C
30
VCE = 100 V
5 ms PULSE WIDTH
20
10
TJ = 125°C 25°C
0
5.0
7.0
9.0
11
13
15
17
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
Figure 3. Transfer Characteristics
2400
1600
Coes
800
Cres
TJ = 25°C
VGE = 0
Cies
0
0
5.0
10
15
20
25
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 5. Capacitance Variation
2.3
VGE = 15 V
80 ms PULSE WIDTH
2.1
IC = 10 A
1.9
7.5 A
1.7
5.0 A
1.5
–50 –25
0 25 50 75 100
TJ, JUNCTION TEMPERATURE (°C)
125 150
Figure 4. Collector–To–Emitter Saturation
Voltage versus Junction Temperature
20
16
QT
12
Q1
Q2
8.0
4.0
TJ = 25°C
VCC = 300 V
IC = 10 A
0
0
20
40
60
80
QG, TOTAL GATE CHARGE (nC)
Figure 6. Gate–To–Emitter Voltage versus
Total Charge
Motorola TMOS Power MOSFET Transistor Device Data
3
Share Link: 