FQU2N60C 查看數據表（PDF） - Fairchild Semiconductor
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FQU2N60C Datasheet PDF : 10 Pages
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Package Marking and Ordering Information
Device Marking
FQD2N60C
FQU2N60C
Device
FQD2N60CTM
FQU2N60CTU
Package
D-PAK
I-PAK
Reel Size
330 mm
Tube
Tape Width
16 mm
N/A
Quantity
2500 units
70 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min
Typ
Max Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
ΔBVDSS Breakdown Voltage Temperature
/ ΔTJ Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 μA
ID = 250 μA, Referenced to 25°C
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
600
--
--
V
--
0.6
--
V/°C
--
--
1
μA
--
--
10
μA
--
--
100
nA
--
--
-100
nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 0.95 A
VDS = 40 V, ID = 0.95 A
2.0
--
4.0
V
--
3.6
4.7
Ω
--
5.0
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
180
235
pF
--
20
25
pF
--
4.3
5.6
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 300 V, ID = 2 A,
RG = 25 Ω
VDS = 480 V, ID = 2 A,
VGS = 10 V
--
9
28
ns
--
25
60
ns
--
24
58
ns
(Note 4)
--
28
66
ns
--
8.5
12
nC
--
1.3
--
nC
(Note 4)
--
4.1
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.9 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 2 A,
dIF / dt = 100 A/μs
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 56 mH, IAS = 2 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 2 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
--
--
1.9
A
--
--
7.6
A
--
--
1.4
V
--
230
--
ns
--
1.0
--
μC
©2003 Fairchild Semiconductor Corporation
2
FQD2N60C / FQU2N60C Rev.1.4
www.fairchildsemi.com
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