QM100TX1-HB 查看數據表（PDF） - MITSUBISHI ELECTRIC
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QM100TX1-HB Datasheet PDF : 5 Pages
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PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
200
Tj=25°C
160
120
IB=100mA
IB=200mA
IB=50mA
80
IB=20mA
40
IB=10mA
0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE VCE (V)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
10 0
7
VCE=2.5V
Tj=25°C
5
4
3
2
10 –1
7
5
4
3
2
10 –2
2.0 2.4 2.8 3.2 3.6 4.0
BASE-EMITTER VOLTAGE VBE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
5
Tj=25°C
Tj=125°C
4
3
IC=75A
2
IC=50A
IC=30A
1
0
10 –3 2 3 5 710 –2 2 3 5 710 –12 3 5 7 10 0
BASE CURRENT IB (A)
MITSUBISHI TRANSISTOR MODULES
QM100TX1-HB
HIGH POWER SWITCHING USE
INSULATED TYPE
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
2
VCE=5.0V
10 4
7
5
4
3
2
VCE=2.5V
10 3
7
5
4
3
2
Tj=25°C
Tj=125°C
2 3 4 5 7 101 2 3 4 5 7 102 2
COLLECTOR CURRENT IC (A)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
10 1
7
5
4
3
2
10 0
7
5
4
3
2
10 –1
10 1
VBE(sat)
VCE(sat)
IB=100mA
Tj=25°C
Tj=125°C
2 3 4 5 7 102 2 3 4 5 7 103
COLLECTOR CURRENT IC (A)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
10 1
VCC=300V
7 IB1=150mA
5
4
IB2=–2.0A
3
2
ts
10 0
7
5
4
3
2
10 –1
10 0
tf
ton
Tj=25°C
Tj=125°C
2 3 4 5 7 101
2 3 4 5 7 102
COLLECTOR CURRENT IC (A)
Feb.1999
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