DIM400LSS17-A000 查看數據表（PDF） - Dynex Semiconductor
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DIM400LSS17-A000 Datasheet PDF : 10 Pages
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ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise
Symbol
Parameter
td(off)
t
f
EOFF
td(on)
tr
E
ON
Qg
Qrr
Irr
EREC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Tcase = 125˚C unless stated otherwise
Symbol
Parameter
td(off)
tf
EOFF
t
d(on)
tr
E
ON
Qrr
Irr
EREC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
DIM400LSS17-A000
Test Conditions
IC = 400A
VGE = ±15V
VCE = 900V
R
G(ON)
=
R
G(OFF)
=
4.7Ω
L ~ 100nH
I = 400A, V = 900V,
F
R
dIF/dt = 3000A/µs
Min. Typ. Max. Units
-
1150
-
ns
-
100
-
ns
-
120
-
mJ
-
250
-
ns
-
250
-
ns
-
150
-
mJ
-
4.5
-
µC
-
100
-
µC
-
230
-
A
-
70
-
mJ
Test Conditions
IC = 400A
V
GE
=
±15V
VCE = 900V
RG(ON) = RG(OFF) = 4.7Ω
L ~ 100nH
IF = 400A, VR = 900V,
dI /dt
F
=
2500A/µs
Min. Typ. Max. Units
-
1400
-
ns
-
130
-
ns
-
180
-
mJ
-
400
-
ns
-
250
-
ns
-
170
-
mJ
-
170
-
µC
-
270
-
A
-
100
-
mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/10
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