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零件编号
产品描述 (功能)
CXG1010N 查看數據表(PDF) - Sony Semiconductor
零件编号
产品描述 (功能)
生产厂家
CXG1010N
Power Amplifier for PHS
Sony Semiconductor
CXG1010N Datasheet PDF : 6 Pages
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Block Diagram
V
DD
1 V
DD
2 V
DD
3
RF
IN
RF
OUT
V
GG
1
V
CTL
V
GG
2
Gate adjustment pin
Gate adjustment pin
V
GG
2
470
Ω
680
Ω
V
GG
1
Pin Configuration
GND
RF
OUT
GND
V
GG
2
GND
V
CTL
V
GG
1
GND
16
CXG1010N
V
DD
3
GND
V
DD
2
GND
V
DD
1
GND
RF
IN
GND
1
Recommended Current Adjustment Method
(1) V
GG
2/PIN separate adjustment
(V
GG
2 adjustment 1)
(PIN adjustment 1)
When the RF input
(PIN) is off, the current
consumption (I
DD
) is
adjusted to 200 mA.
The output power
(P
OUT
) is adjusted
to 21.5 dBm.
Variation of I
DD
and
P
OUT
due to adjustment
I
DD
=200±20 mA
P
OUT
=21.5 dBm
(V
GG
2 adjustment 2)
The current
consumption (I
DD
)
is finely adjusted to
200 mA.
I
DD
=200 mA
P
OUT
=21.5±0.2 dBm
(PIN adjustment 2)
The output power
(P
OUT
) is finely
adjusted to 21.5 dBm.
I
DD
=200±5 mA
P
OUT
=21.5 dBm
(2) Simple adjustment
(I
DD
read)
When the RF input (PIN)
is off, the gate voltage
(V
GG
2) is set to 0.4 V
and it is read.
Variation of I
DD
and P
OUT
due to adjustment
(V
GG
2 setting)
The formula
∗
1
where
V
GG
2=f (I
DD
: V
GG
2=0.4 V)
is used to set V
GG
2.
∗
1
e.g. V
GG
2=a-b x I
DD
(PIN adjustment)
The output power (P
OUT
)
is adjusted to 21.5 dBm.
I
DD
=200±5 mA
P
OUT
=21.5 dBm
—2—
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