NTD20N06 查看數據表（PDF） - ON Semiconductor
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NTD20N06 Datasheet PDF : 8 Pages
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NTD20N06
40
VGS = 10 V
7V
9V
32
8V
24
16
8
6.5 V
6V
5.5 V
5V
4.5 V
0
0
1
2
3
4
5
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
40
VDS ≥ 10 V
32
24
16
8
TJ = 25°C
TJ = 100°C
0
2.6
3.4
4.2
TJ = −55°C
5
5.8
6.6
7.4
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.065
VGS = 10 V
0.055
0.045
TJ = 100°C
0.065
0.055
VGS = 15 V
0.045
TJ = 100°C
0.035
0.025
0.015
0
TJ = 25°C
TJ = −55°C
8
16
24
32
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
0.035
TJ = 25°C
0.025
TJ = −55°C
0.015
40
0
8
16
24
32
40
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2
ID = 10 A
1.8
VGS = 10 V
1.6
10000
VGS = 0 V
1000
TJ = 150°C
1.4
TJ = 125°C
100
1.2
TJ = 100°C
1
10
0.8
0.6
−50 −25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
1
0
10
20
30
40
50
60
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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